View HMC479ST89_77295.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MICROWAVE CORPORATION
v00.0204
HMC479ST89
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
Features
P1dB Output Power: +18 dBm Gain: 15 dB Output IP3: +33 dBm Cascadable 50 Ohm I/Os Single Supply: +5V to +12V Industry Standard SOT89 Package
8
AMPLIFIERS - SMT
Typical Applications
The HMC479ST89 is an ideal RF/IF gain block & LO or PA driver: * Cellular / PCS / 3G * Fixed Wireless & WLAN * CATV, Cable Modem & DBS * Microwave Radio & Test Equipment
Functional Diagram
General Description
The HMC479ST89 is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering DC to 5 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +20 dBm output power. The HMC479ST89 offers 15 dB of gain with a +33 dBm output IP3 at 850 MHz while requiring only 75 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.
Electrical Specifications, Vs= 8.0 V, Rbias= 51 Ohm, TA = +25 C
Parameter DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 5.0 GHz DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 1.0 GHz 1.0 - 5.0 GHz DC - 5.0 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz 0.5 - 1.0 GHz 1.0 - 2.5 GHz 2.5 - 4.0 GHz 4.0 - 5.0 GHz DC - 3.0 GHz 3.0 - 5.0 GHz Min. 12.5 11.5 10.5 9.5 8.5 Typ. 15 13.5 12.5 11.5 10.5 0.008 12 16 18 22 20 22 18 18 16 14 13 11 33 30 25 23 4.0 4.5 75 Max. Units dB dB dB dB dB dB/ C dB dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm dB dB mA
Gain
Gain Variation Over Temperature Input Return Loss
0.012
Output Return Loss Reverse Isolation
Output Power for 1 dB Compression (P1dB)
15 13 11 10 8
Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
8 - 274
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v00.0204
HMC479ST89
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
Broadband Gain & Return Loss
25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 0 1 2
Gain vs. Temperature
20 18 16 14 12 10 8 6 4 2 0
+25C +85C -40C
8
AMPLIFIERS - SMT
8 - 275
RESPONSE (dB)
3
4
5
6
7
8
GAIN (dB)
S21 S11 S22
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0 INPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 0 1 2 3 4 5 6 FREQUENCY (GHz)
+25C +85C -40C
Output Return Loss vs. Temperature
0 OUTPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 -35 -40 0 1 2 3 4 5 6 FREQUENCY (GHz)
+25C +85C -40C
Reverse Isolation vs. Temperature
0 REVERSE ISOLATION (dB)
+25C +85C -40C
Noise Figure vs. Temperature
10 9
+25C +85C -40C
-5
8 NOISE FIGURE (dB) 3 4 5 6 7 6 5 4 3 2 1
-10
-15
-20
-25 1 2 FREQUENCY (GHz)
0 0 1 2 3 4 5 6 FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0204
MICROWAVE CORPORATION
HMC479ST89
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
8
AMPLIFIERS - SMT
P1dB vs. Temperature
22 20 18 16 P1dB (dBm) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 FREQUENCY (GHz)
+25C +85C -40C
Psat vs. Temperature
22 20 18 16 Psat (dBm) 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 FREQUENCY (GHz)
+25C +85C -40C
14
Output IP3 vs. Temperature
40
Gain, Power & OIP3 vs. Supply Voltage for Constant Icc= 72 mA @ 850 MHz
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 5 6 7 8 9 Vs (Vdc)
35 OIP3 (dBm)
30
25
+25C +85C -40C
20
15 0 1 2 3 4 5 6 FREQUENCY (GHz)
Gain P1dB Psat OIP3
10
11
12
Vcc vs. Icc Over Temperature for Fixed Vs= 8V, RBIAS= 51 Ohms
82 80 78 Icc (mA) 76 74 72 70 68 66 3.8 -40C +25C +85C
3.9
4
4.1
4.2 Vcc (Vdc)
4.3
4.4
4.5
4.6
8 - 276
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0204
MICROWAVE CORPORATION
HMC479ST89
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) RF Input Power (RFin)(Vcc = +4.2 Vdc) Junction Temperature Continuous Pdiss (T = 85 C) (derate 14.76 mW/C above 85 C) Thermal Resistance (junction to lead) Storage Temperature Operating Temperature +6.0 Vdc +17 dBm
8
AMPLIFIERS - SMT
NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 7. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATABLE WITH THE "MICRO-X PACKAGE"
150 C 0.960 W
67.6 C/W -65 to +150 C -40 to +85 C
Outline Drawing
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
8 - 277
v00.0204
MICROWAVE CORPORATION
HMC479ST89
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
8
AMPLIFIERS - SMT
Pin Descriptions
Pin Number Function Description Interface Schematic
1
RFIN
This pin is DC coupled. An off chip DC blocking capacitor is required.
3
RFOUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins and package bottom must be connected to RF/DC ground.
Application Circuit
Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature.
Recommended Bias Resistor Values for Icc= 75 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs) RBIAS VALUE RBIAS POWER RATING 5V 13 1/8 W 6V 27 1/4 W 8V 51 1/2 W 10V 82 1/2 W 12V 110 1W
Recommended Component Values for Key Application Frequencies
Frequency (MHz) Component 50 L1 C1, C2 270 nH 0.01 F 900 56 nH 100 pF 1900 18 nH 100 pF 2200 18 nH 100 pF 2400 15 nH 100 pF 3500 8.2 nH 100 pF 5000 6.8 nH 100 pF
8 - 278
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0204
MICROWAVE CORPORATION
HMC479ST89
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
Evaluation PCB
8
AMPLIFIERS - SMT
List of Materials for Evaluation PCB 108323*
Item J1 - J2 J3 - J4 C1, C2 C3 C4 C5 R1 L1 U1 PCB** Description PC Mount SMA Connector DC Pin Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 F Capacitor, Tantalum Resistor, 1210 Pkg. Inductor, 0603 Pkg. HMC479ST89 107368 Evaluation PCB
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
** Circuit Board Material: Rogers 4350 * Reference this number when ordering complete evaluation PCB.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
8 - 279

▲Up To Search▲

Price & Availability of HMC479ST89

	To Download HMC479ST89 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .